收藏本站
Package Marking and Ordering Information
Device Marking
FDD13AN06A0
Device
FDD13AN06A0
Package
D-PAK
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
60
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 50V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 50A, V GS = 10V
I D = 25A, V GS = 6V
I D = 50A, V GS = 10V,
T J = 175 o C
2
-
-
-
- 4
0.0115 0.0135
0.022 0.034
0.026 0.030
V
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
1350
260
90
22
-
-
-
29
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 30V
I D = 50A
I g = 1.0mA
-
-
-
-
2.6
8.2
5.6
6.4
3.4
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 30V, I D = 50A
V GS = 10V, R GS = 12 ?
-
-
-
-
-
-
-
9
77
26
25
-
130
-
-
-
-
77
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 50A
I SD = 25A
I SD = 50A, dI SD /dt = 100A/ μ s
I SD = 50A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
24
15
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 45 μ H, I AS = 50A.
?2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD14AN06LA0_F085 MOSFET N-CH 60V 9.5A DPAK-3
FDD16AN08A0_F085 MOSFET N-CH 75V 50A DPAK
FDD16AN08A0_NF054 MOSFET N-CH 75V 50A DPAK
FDD18N20LZ MOSFET N-CH 200V DPAK-3
FDD2572_F085 MOSFET N-CH 150V 29A DPAK
FDD2582 MOSFET N-CH 150V 21A DPAK
FDD2670 MOSFET N-CH 200V 3.6A D-PAK
FDD26AN06A0_F085 MSOFET N-CH 60V 36A DPAK-3
相关代理商/技术参数
FDD13AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 60V, 9.9A, TO-252AA
FDD13AN06A0_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 13.5m??
FDD13AN06A0_F085 功能描述:MOSFET Trans N-Ch 60V 9.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD13AN06A0_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDD13AN06A0_Q 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD14AN06L_F085_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 14.6m??
FDD14AN06LA0 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD14AN06LA0_F085 功能描述:MOSFET 60V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube